采用扫描电镜、能谱仪和透射电镜研究了Sn3． 5Ag4Ti( Ce，Ga) 低温活性焊接SiO₂基板界面的微观形貌和焊接机理，并根据反应热力学和活性元素的吸附理论分析了
Sn3． 5Ag4Ti( Ce，Ga) 与SiO2基板的焊接机理及焊接动力学过程． 实验结果表明，焊接界面由TiSi 和TiO₂形成． 理论分析与实验结果一致表明: Ti 元素在SiO₂基板表面的化学吸附可能是实现焊接润湿的主要原因，在焊接的初始阶段发挥重要的作用; Ti 与SiO₂之间的界面反应并形成界面产物是实现Sn3． 5Ag4Ti( Ce，Ga) 与SiO₂
基板焊接的主要机理．

The interfacial microstructure and soldering mechanism of the low-temperature active bonding SiO₂ substrate with Sn3.5Ag4Ti( Ce,Ga) alloy filler were investigated by means of SEM,EDX and TEM,and the mechanism and dynamic process of the active bonding between Sn3.5Ag4Ti( Ce,Ga) and SiO₂ substrate were analyzed on the basis of the active adsorption and reaction thermodynamics theories.Experiment results show that TiSi and TiO₂ phases form along the interface.Both theoretical results and experimental results indicate that the chemical adsorption of Ti on SiO₂ substrate interface may be the main reason for wetting and plays an important role in the initial bonding stage,and that the main bonding mechanism of Sn3.5Ag4Ti( Ce,Ga) and SiO₂ substrate can be described as the interfacial reaction between Ti and SiO₂ and the forming of correspondent reactants.