为适应柔性有源有矩阵有机发光二极管(AMOLED)等新型显示技术发展的需要，将低温溶液处理的氧化锌作为半导体层、电化学氧化的氧化铝钕作为栅绝缘层，制备了氧化锌薄膜晶体管(TFT)． 制备氧化锌半导体层所用的前驱体溶液为无碳的 Zn(OH)_x -(NH₃)_y^(2-x)+ 水溶液，这种氨络合物溶液制备简单、成本低，并且由于容易形成高活性的氢氧自由基，使得氨 － 金属之间的分解所需要的活化能较低，生成氧化锌所需的能量较小，可以在 180 ℃的较低温度下获得氧化锌多晶薄膜． 所制备的 TFT 器件的最高迁移率可达 0． 9cm² /(V·s)． 这种低温氧化锌薄膜工艺与室温电化学氧化的栅绝缘层工艺相结合，具有温度低和迁移率高的特点，完全能与柔性衬底兼容，在柔性显示中具有很大的应用前景．

In order to meet the requirements of novel display technologies such as flexible active-matrix organic light-emitting diodes (AMOLED)，thin film transistors (TFTs) are fabricated，with low-temperature solution-pro-cessed ZnO as the semiconductor layer and with electrochemical oxidized alumina neodymium as the gate dielectric layer． In the preparation of ZnO semiconductor layer，carbon-free aqueous Zn(OH)_x-(NH₃)_y^(2-x)+ solution with low cost and fabrication simplicity is employed，and，more importantly，the energy for metal-ammine dissociation and ZnO formation is rather low thanks to the highly activated hydroxyl radicals． As a result，ZnO polycrystalline films can be realized at a relatively low temperature，namely 180℃． The proposed low-temperature solution-pro-cessed ZnO fabrication method combining with room-temperature electrochemically-oxidized gate dielectric layer helps achieve high mobility up to 0． 9 cm² /(V·s)，and is completely compatible with flexible substrates，so that it meets the demand of flexible electronic devices well．