为促进氧化锌薄膜晶体管( ZnO- TFT) 在有源驱动平板显示领域中的实际应用，以高纯氧化锌( ZnO) 为靶材，采用射频磁控溅射法沉积 ZnO 薄膜作为半导体活性层，制备出 ZnO- TFT，研究了可见光诱导引起的器件特性的不稳定性．实验结果表明: 在可见光照射下，该 ZnO- TFT 器件呈现出一定程度的不稳定性; 随着光照强度的增加，迁移率稍有增大，阈值电压有微弱的减小; 漏电流的相对变化量受栅电压控制，即在开态时相对变化量较小，对于 2210 lx 的照射强度，相对变化量的最小值为 0．58，而在亚阈值区和关态时，漏电流受光照强度的影响较大，在相同强度的光照射下相对变化量的最大值为 36．29． 对可见光诱导不稳定性恢复过程的研究发现，光照关断后的恢复过程相对缓慢，且随时间呈现出先快后慢的现象．

 In order to promote the commercial application of ZnO- based thin film transistors (ZnO- TFTs) to active-driving flat display field,TFTs with ZnO as the channel layer were fabricated via the RF (Radio Frequency) mag-netron sputtering with undoped ZnO target.Then,the photo- induced instability of the devices was investigated under visible light illumination.Experimental results indicate that (1) the ZnO- TFT device exhibits light- induced instability under visible light illumination; (2) with the increase of illumination intensity,the carrier mobility of the device slightly increases,while the threshold voltage weakly reduces; and (3) the relative variation of drain current is strongly modulated by gate voltage,for instance,it becomes smaller with a minimum of 0.58 at 2210lx when the device operates in the on- state mode,but becomes larger with a maximum of 36.29 at the same illumina-tion intensity when the device operates in the subthreshold or off- state mode.Moreover,it is also found that,the recovery of the photo- induced instability is relatively slow and tends to slow down with the passage of time.