单苯分子器件I-V特性的紧束缚近似法研究

华南理工大学学报（自然科学版） ›› 2005, Vol. 33 ›› Issue (3): 60-62.

单苯分子器件I-V特性的紧束缚近似法研究

李娜蔡敏

华南理工大学物理科学与技术学院，广东广州 510640

收稿日期:2003-12-24 出版日期:2005-03-25 发布日期:2005-03-25
通信作者: 李娜(1975-)，女，讲师，主要从事半导体器件与集成技术研究 E-mail:hblina@ china.com.cn
作者简介:李娜(1975-)，女，讲师，主要从事半导体器件与集成技术研究

Investigation into I-v Characteristics of Single-Benzene Molecular Device by M eans of Tight-Binding M ethod

Li Na Cai Min

College of Physical Science and Tech.,South China Univ.of Tech.,Guangzhou 510640,Guangdong,China

Received:2003-12-24 Online:2005-03-25 Published:2005-03-25
Contact: Li Na(born in 1975)，female，lecturer，mainly researches on semiconductor devices and integration technologY． E-mail:hblina@ china.com.cn
About author:Li Na(born in 1975)，female，lecturer，mainly researches on semiconductor devices and integration technologY．

摘要/Abstract

摘要： 采用紧束缚近似法对由单苯基分子构成的三端器件的I-V特性进行了研究，所得结果近似表现出了MOS(Metal—Oxide—Semiconductor)器件的电学规律；同时模拟并讨论了该器件的I-V特性随温度的变化规律．发现：电流幅值随门电压的增大而增加，温度对电流幅值有重要影响．文中所得结论为分子器件和纳米器件的开发提供了理论基础．

关键词: 紧束缚, 分子器件, I-V特性

Abstract:

The Tight-Binding Method is adopted to investigate the I-V characteristics of a three-terminal singlebenzene molecular device.with the results well reflecting the electrical characteristics of MOS(Metal-Oxide-Semiconductor)devices.The influence of temperature on the I-V characteristics of the device is also simulated and discussed.it is found that the current magnitude increases with the increase in the gate voltage,and that temperature greatly afects the current magnitude,which lays a theoretical basis for the development of molecular devices and nano-devices.

Key words: tight-binding, molecular device, I-V characteristic

李娜蔡敏. 单苯分子器件I-V特性的紧束缚近似法研究[J]. 华南理工大学学报（自然科学版）, 2005, 33(3): 60-62.

Li Na Cai Min . Investigation into I-v Characteristics of Single-Benzene Molecular Device by M eans of Tight-Binding M ethod[J]. Journal of South China University of Technology (Natural Science Edition), 2005, 33(3): 60-62.