用区熔技术改善多晶硅薄膜颗粒硅带衬底的质量

华南理工大学学报(自然科学版) ›› 2005, Vol. 33 ›› Issue (7): 28-31.

用区熔技术改善多晶硅薄膜颗粒硅带衬底的质量

胡芸菲¹ 沈辉² 王磊³ 邹禧武³ 班群² 梁宗存³ 刘正义¹ 闻立时¹

1．华南理工大学机械工程学院，广东广州 510640；2．中山大学太阳能系统研究所，广东广州 510275；3．中国科学院广州能源研究所，广东广州 510640

收稿日期:2004-10-18 出版日期:2005-07-25 发布日期:2005-07-25
通信作者: 胡芸菲(1978-)，女，博士生，主要从事功能材料研究． E-mail:huyf@ms.giec.ac.cn
作者简介:胡芸菲(1978-)，女，博士生，主要从事功能材料研究．
基金资助:
国家自然科学基金资助项目(50376067)；国家“863”计划项目(2001AA513060)

Quality Improvement of SSP as the Substrate of Polycrystalline Silicon Thin Film Via ZM R Technique

Hu Yun-fei¹ Shen Hui² Wang Lei³ Zou Xi-wu³ Ban Qun² Liang Zong-tun³ Liu Zheng-yi¹ Wen Li-shi¹

1.College of Mechanical Engineering,South China Univ.of Tech.,Guangzhou 510640,Guangdong,China;2.Institute of So lar Energy System,Sun Yat-Sen Univ.,Guan gzhou 510275,Guangdong,China;3.Guangzhou Institute of Energy Conversion,the Chinese Academy of Sciences,Guangzhou 51 0640.Guangdong.China

Received:2004-10-18 Online:2005-07-25 Published:2005-07-25
Contact: 胡芸菲(1978-)，女，博士生，主要从事功能材料研究． E-mail:huyf@ms.giec.ac.cn
About author:胡芸菲(1978-)，女，博士生，主要从事功能材料研究．
Supported by:
国家自然科学基金资助项目(50376067)；国家“863”计划项目(2001AA513060)

摘要/Abstract

摘要： 以颗粒硅带为衬底，通过化学气相沉积法制备多晶硅薄膜作为太阳电池的活性层．为了改善硅带衬底的质量，引入区熔再结晶的方法，期望将其表面平整度及结晶质量进一步提高，进而改善以其为衬底的多晶硅薄膜质量．借助台阶仪、x射线衍射(XRD)、扫描电镜(SEM)等手段对颗粒硅带及多晶硅薄膜进行了表面轮廓、结晶质量和微观形貌的表征．结果表明：区熔后的颗粒硅带表面平整度得到了较好的改善；表面具有[311]择优方向的硅带区熔后都倾向[111]择优；在区熔硅带衬底上沉积的多晶硅薄膜晶粒尺寸在100 μm以上，但暂无明显证据证明区熔对薄膜结晶质量有显著提高．

关键词: 区熔, 颗粒硅带, 多晶硅薄膜, 平整度, 择优取向

Abstract:

The polycrystalline silicon(Poly-Si)thin film,an active layer of the solar cell,was prepared by means of Chemical Vapor Deposition(CVD)with SSP(Silicon Sheet from Powder)as,the substrate.The ZMR(Zone Mehing Recrystallization)technique was next introduced to improve the smoothness and crystal quality of SSP and to further improve the quality of the thin film.The surface profiles,micro-morphologies and crystal quality of SSP ribbon and Poly-Si film were then investigated by the step profiler,XRD(X-ray Diffraction)and SEM (Scanning Electron Microscopy).It is shown that the surface smoothness of SSP is improved after the ZMR process,and SSP with[3 1 1]preferred orientation tends to grow in[1 1 1]prefered orientation.Moreover,the crystal size of the thin film on SSP ribbon via ZMR is more than 100μm,but there is not yet enough evidence to prove that ZMR greatly improves the crystal quality of Poly-Si thin film.

Key words: zone melting recrystallization, silicon sheet from powder, polycrystalline silicon thin film, smoothness, prefered orientation

胡芸菲沈辉王磊邹禧武班群梁宗存刘正义闻立时. 用区熔技术改善多晶硅薄膜颗粒硅带衬底的质量[J]. 华南理工大学学报(自然科学版), 2005, 33(7): 28-31.

Hu Yun-fei Shen Hui Wang Lei Zou Xi-wu Ban Qun Liang Zong-tun Liu Zheng-yi Wen Li-shi. Quality Improvement of SSP as the Substrate of Polycrystalline Silicon Thin Film Via ZM R Technique[J]. Journal of South China University of Technology(Natural Science Edition), 2005, 33(7): 28-31.

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